dmn2004k document number: ds30938 rev. 9 - 2 1 of 6 www.diodes.com july 2013 ? diodes incorporated dmn2004 k n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 20v 0.55? @ v gs = 4.5v 630ma 0.9? @ v gs = 1.8v 410ma description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions features and benefits ? low on-resistance: r ds(on) = 550 (max) m ? @ v gs = 4.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 2kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging dmn2004k-7 sot23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view d g s top view nab = product type marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) esd protected to 2kv source gate protection diode gate drain equivalent circuit shanghai a/t site chengdu a/t site e3 y y m nab ym nab ym
dmn2004k document number: ds30938 rev. 9 - 2 2 of 6 www.diodes.com july 2013 ? diodes incorporated dmn2004 k maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v drain current (note 5) v gs = 4.5v steady state t a = +25c t a = +85c i d 630 450 ma drain current (note 5) v gs = 1.8v steady state t a = +25c t a = +85c i d 410 300 ma pulsed drain current (note 6) i dm 1.5 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 350 mw thermal resistance, junction to ambient r ja 357 c/w operating and storage temperature range t j, t stg -65 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 10a zero gate voltage drain current i dss ? ? 1 a v ds = 16v, v gs = 0v gate-source leakage i gss ? ? ?1 a v gs = ?4.5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 0.5 ? 1.0 v v ds = v gs , i d = 250a static drain-source on-resistance r ds(on) ? 0.4 0.5? 0.7 0.55 0.70 0.9 ? v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward transfer admittance |y fs | 200 ? ? ms v ds =10v, i d = 0.2a source current i s ? ? 0.5 a ? diode forward voltage (note 7) v sd 0.6 ? 1 v v gs = 0v, i s = 500ma dynamic characteristics input capacitance c iss ? ? 150 pf v ds = 16v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? 25 pf reverse transfer capacitance c rss ? ? 20 pf gate resistance r g ? 292 ? ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge q g ? 0.9 ? nc v ds = 15v, v gs = 4.5v, i d = 0.5a gate-source charge q gs ? 0.2 ? gate-drain charge q gd ? 0.2 ? turn-on delay time t d(on) ? 5.7 ? ns v gs = 8v, v ds = 15v, r g = 6 ? , r l = 30 ? turn-on rise time t r ? 8.4 ? turn-off delay time t d(off) ? 59.4 ? turn-off fall time t f ? 37.6 ? body diode reverse recovery time t rr ? 5.5 ? ns i s = 0.5a, di/dt = -100a/s body diode reverse recovery charge q rr ? 0.85 ? nc i s = 0.5a, di/dt = -100a/s notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout, single sided. 6. pulse width 10s, duty cycle 1%. 7. short duration pulse test used to minimize self-heating effect.
dmn2004k document number: ds30938 rev. 9 - 2 3 of 6 www.diodes.com july 2013 ? diodes incorporated dmn2004 k 0 0 12345 v , drain-source voltage (v) figure 1 typical output characteristics ds i, d r ain c u r r en t (a) d 0.3 0.6 0.9 v = 1.2v gs v = 1.8v gs v = 2.0v gs v = 2.2v gs v = 1.4v gs v = 1.6v gs v , gate-source voltage (v) figure 2 gs reverse drain current vs. source-drain voltage 100 0 1,000 i, d d r ai n c u r r e n t (ma) 200 300 400 500 600 700 800 900 0.4 0.8 1.2 1.6 2 v = 10v pulsed ds t = 150 c a t = -55c a t = 5c a 8 t = 25c a t , channel temperature (c) figure 3 gate threshold voltage vs. channel temperature ch v g a t e t h r es h o ld v o l t a g e (v) gs(th), 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -75 -50 -25 0255075 100 125 150 v= 10v i= 1ma pulsed ds d 0.1 i drain current (a) figure 4 static drain-source on-resistance vs. drain current d , 1 0.2 0.4 0.6 0.8 1.0 v = 10v pulsed gs t = 150 c a t = -55c a t = -25c a t = 0c a t = 25c a t = 125 c a t = 85c a r , static drain-source on-resistance ( ) ds(on) ? 0.5 i , drain current (a) figure 5 static drain-source on-resistance vs. drain current d 0.1 1 v = 5v pulsed gs t = 150 c a t = -55c a t = -25c a t = 0c a t = 25c a t = 125 c a t = 85c a 0.2 0.4 0.6 0.8 1.0 0.5 r , s t a t i c d r ain-s o u r c e on-resistance ( ) ds(on) ? 6 0.2 0.1 0 0.6 0.5 0.4 0.3 0.7 1.0 0.9 0.8 0 v , gate-source voltage (v) figure 6 static drain-source, on-resistance vs. gate-source voltage gs 4 2 t = 25c a i = 540ma d r , static drain-source on-resistance ( ) (normalized) ds(on) ?
dmn2004k document number: ds30938 rev. 9 - 2 4 of 6 www.diodes.com july 2013 ? diodes incorporated dmn2004 k i , drain current (a) figure 7 d on-resistance vs. drain current and gate voltage 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 1.2 v= 1.8v gs v = 4.5v gs v = 2.5v gs t = 25c j r , static drain-source on-resistance ( ) ds(on) ? t , junction temperature ( c) figure 8 j static drain-source, on-resistance vs. temperature -50 -25 025 50 75 100 125 150 0 0.2 0.3 0.5 0.1 0.4 v = 10v, gs i = 280ma d v = 4.5v, gs i = 540ma d r , static drain-source on-resistance ( ) (normalized) ds(on) ? i , drain-source leakage current (na) dss v, figure 9 drain source leakage current vs. voltage ds drain-source voltage (v) 0.1 1 10 100 1,000 10,000 24 68 10 12 14 16 18 20 tj = 100c tj = 150c t = 25 c j i , reverse drain current (a) dr 0.001 0.01 0.1 0.5 0 1 1 v , source figure 10 reverse drain current vs. source-drain voltage sd drain- voltage (v) v = 0v gs t= -55c a t = 150 c a t = -25c a t = 0c a t = 25c a t = 85c a t = 125c a 1,000 i , drain current (ma) d figure 11 forward transfer admittance vs. drain current 1 10 100 0.01 0.1 1 |y |, forward transfer admittance (s) fs v = 10v gs t = a 150 c t = a -55 c t = a 85 c t = 25c a v , drain source voltage (v) ds figure 12 capacitance variation 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 18 20 c , c a p a c i t an c e (p f ) t f = 1mhz v = 0v gs c iss c oss c rss
dmn2004k document number: ds30938 rev. 9 - 2 5 of 6 www.diodes.com july 2013 ? diodes incorporated dmn2004 k 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd figure 13 diode forward voltage vs. current i, s o u r c e c u r r e n t (a) s t = 25c a 00.511.522.53 q , total gate charge (nc) g figure 14 gate-charge characteristics 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 15v i = 0.5a ds d package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com /datasheets/ap02001.pdf for latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 ?? 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
dmn2004k document number: ds30938 rev. 9 - 2 6 of 6 www.diodes.com july 2013 ? diodes incorporated dmn2004 k important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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